SIHP22N60E-GE3MOSFET, N-CH, 650V, 21A, 0.18R, TO-220

  • Bauform: TO-220
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain: 21A (Tc)
  • Vgs: +-30 V
  • Temperaturbereich: -55 ... +150 °C
  • Leistung: 227 W
  • RDS: 0,18 Ohm
  • Typ: N-Kanal

  • General
    • Type
    • Unipolartransistoren (FETs)
    • Design
    • MOSFETs
    • Technology
    • N-CH
    • Mounting form
    • TO-220
  • Electrical values
    • UDS
    • 650 V
    • Id
    • 21 A
    • Ptot
    • 227 W
    • RDS(on)
    • 0.18 Ohm